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23N50 N-Channel MOSFET

23N50 N-Channel MOSFET

  • R 70.00


Part

23N50

Description
N-Channel MOSFET

 

FEATURES:

  • Drain Current –ID= 23A@ TC=25℃ ·
  • Drain Source Voltage- : VDSS=500V(Min ) ·
  • Static Drain-Source On-Resistance : RDS(on) =0.

245Ω(Max) ·100% avalanche tested ·

Minimum Lot-to-Lot variations for robust device performance and reliable operation

DESCRIPTION: 

Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS  (Ta=25℃)

SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 23 A IDM Drain Current-Single Pluse 92 A P .


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