20A, 500V, 0.
270 Ohm,

N-Channe l Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFE T designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are de signed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gat e drive power.
These types can be opera ted directly from .