Features

·         N-Channel Power MOSFET

·         Continuous Drain Current (ID): 10A

·         Gate threshold voltage (VGS-th) is 10V (limit = ±20V)

·         Drain to Source Breakdown Voltage: 400V

·         Drain Source Resistance (RDS) is 0.55 Ohms

·         Rise time and fall time is 27nS and 24nS

·         Available in To-220 package

The IRF740 is an N-Channel Power MOSFET which can switch loads upto 400V. The Mosfet could switch loads that consume upto 10A, it can turned on by provide a gate threshold voltage of 10V across the Gate and Source pin. Since the mosfet is for switching high current high voltage loads it has a relatively high gate voltage, hence cannot be used directly with a I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF540N or 2N7002 etc.

One considerable disadvantage of the IRF740 Mosfet is its high on-resistance (RDS) value which is about 0.55 ohms. Hence this mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10V to the gate pin of this Mosfet the simplest driver circuit can be build using a transistor. It is relatively cheap and has very low thermal resistance, added to this the mosfet also has good switching speeds and hence can be used in DC-DC converter circuits.

Applications

• Switching high power devices
• Inverter Circuits
• DC-DC Converters
• Control speed of motors
• LED dimmers or flashers
• High Speed switching applications